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STP80NS04Z 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP80NS04Z
功能描述  N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP80NS04Z 数据表(HTML) 2 Page - STMicroelectronics

  STP80NS04Z Datasheet HTML 1Page - STMicroelectronics STP80NS04Z Datasheet HTML 2Page - STMicroelectronics STP80NS04Z Datasheet HTML 3Page - STMicroelectronics STP80NS04Z Datasheet HTML 4Page - STMicroelectronics STP80NS04Z Datasheet HTML 5Page - STMicroelectronics STP80NS04Z Datasheet HTML 6Page - STMicroelectronics STP80NS04Z Datasheet HTML 7Page - STMicroelectronics STP80NS04Z Datasheet HTML 8Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-case
Rthj-amb
Rthc-sink
T l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-case
Typ
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
0.94
0.65
62.5
0.5
300
oC/W
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
80
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =30 V)
500
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VCLAMP
Drain-Gate Breakdown
Voltage
ID =1 mA
VGS =0
-40 < Tj < 175
oC
33
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =16 V
Tj = 175
oC50
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 10 V
Tj =175
oC
VGS =
± 16 V
Tj =175
oC
50
150
µA
µA
VGSS
Gat e-Source
Breakdown Voltage
IG = 100
µA18
V
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS=VGS
ID =1 mA
-40 < Tj < 150
oC
1. 7
3
4. 2
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V
ID =40 A
VGS =16V
ID =40 A
8
7.5
9
8
m
Ω
m
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
80
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =40 A
30
50
S
Ciss
Coss
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
4000
1250
230
5400
1700
320
pF
pF
pF
STP80NS04Z
2/8



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