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PRELIMINARY DATA

March 2001

STP85NF3LL

STB85NF3LL-1

N-CHANNEL 30V - 0.006

LOW GATE CHARGE STripFET™ POWER MOSFET

s

s

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power MOSFET is the

third genaration of STMicroelectronics unique “

Single Feature Size” strip-based process. The re-

sulting transistor shows the best trade-off between

on-resistance and gate charge. When used as

high and low side in buck regulators, it gives the

best performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

TYPE

STP85NF3LL

STB85NF3LL-1

30 V

30 V

< 0.008

Ω

< 0.008

Ω

85 A

85 A

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 15

V

85

A

60

A

Drain Current (pulsed)

340

A

110

W

Derating Factor

0.73

W/°C

Storage Temperature

–65 to 175

°C

Max. Operating Junction Temperature

175

°C

TO-220

1

2

3

1

2

3

INTERNAL SCHEMATIC DIAGRAM