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August 2002

STP8NM50

STP8NM50FP

N-CHANNEL 500V - 0.7

Ω - 8A TO-220/TO-220FP

MDmesh™Power MOSFET

(*)Limited only by maximum temperature allowed

n

n

HIGH dv/dt AND AVALANCHE CAPABILITIES

n

100% AVALANCHE TESTED

n

LOW INPUT CAPACITANCE AND GATE

CHARGE

n

LOW GATE INPUT RESISTANCE

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar competition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

STP8NM50

STP8NM50FP

500V

500V

< 0.8

Ω

< 0.8

Ω

8 A

8 A

Symbol

Parameter

Value

Unit

STP8NM50

STP8NM50FP

500

V

500

V

Gate- source Voltage

±30

V

5

5 (*)

A

3.1

3.1 (*)

A

Drain Current (pulsed)

20

20 (*)

A

120

30

W

Derating Factor

0.4

W/°C

dv/dt

Peak Diode Recovery voltage slope

15

V/ns

Insulation Winthstand Voltage (DC)

--

2500

V

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

TO-220

TO-220FP

1

2

3

1

2

3

INTERNAL SCHEMATIC DIAGRAM