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STP8NM50FP 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP8NM50FP
功能描述  N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP MDmesh™Power MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP8NM50FP 数据表(HTML) 3 Page - STMicroelectronics

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STP8NM50/STP8NM50FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 250V, ID = 2.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
16
ns
tr
Rise Time
8
ns
Qg
Total Gate Charge
VDD = 400V, ID = 5A,
VGS = 10V
13
nC
Qgs
Gate-Source Charge
4
nC
Qgd
Gate-Drain Charge
6
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400V, ID = 5A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
14
ns
tf
Fall Time
6
ns
tc
Cross-over Time
13
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
5
A
ISDM (2)
Source-drain Current (pulsed)
20
A
VSD (1)
Forward On Voltage
ISD = 5A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Charge
ISD = 5A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
185
1.1
11.5
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Charge
ISD = 5A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
270
1.6
12
ns
µC
A
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220



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