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STP90NF03L 数据表(PDF) 2 Page - STMicroelectronics |
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STP90NF03L 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() STP90NF03L/STB90NF03L-1 2/9 ABSOLUTE MAXIMUM RATINGS ( ) Pulse width limited by safe operating area THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON /OFF Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 30 V VDGR Drain-gate Voltage (RGS =20 kΩ) 30 V VGS Gate- source Voltage ±20 V ID Drain Current (continuous) at TC =25°C 90 A ID Drain Current (continuous) at TC =100°C 65 A IDM ( ) Drain Current (pulsed) 360 A PTOT Total Dissipation at TC = 25°C 150 W Derating Factor 0.73 W/°C Tstg Storage Temperature –65 to 175 °C Tj Max. Operating Junction Temperature 175 °C Rthj-case Thermal Resistance Junction-case Max 1 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 30 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0) VGS = ±20V ±100 nA ID(on) On State Drain Current VDS >ID(on) xRDS(on)max, VGS = 10V 90 A VGS(th) Gate Threshold Voltage VDS =VGS,ID = 250 µA 1 2.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID =45 A 0.0056 0.0065 Ω VGS =5V, ID =45 A 0.007 0.012 Ω |
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