STP9NB60 datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP9NB60

功能描述	N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 9 page

STP9NB60

STP9NB60FP

N - CHANNEL 600V - 0.7

Ω - 9A TO-220/TO220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.7

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

January 2000

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP9NB60

STP9NB60F P

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

600

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (cont inuous) at Tc =25

oC9.0

9.0(*)

A

ID

Drain Current (cont inuous) at Tc =100

oC5.7

5.7(*)

A

IDM (

•)

Drain Current (pulsed)

36

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derat ing F act or

1.0

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)



2000

V

Tstg

St orage Temperature

-65 to 150

o C

Tj

Max. O perat ing Junction Temperat ure

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(*)

Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

ST P9NB60

ST P9NB60FP

600 V

<0.8

Ω

<0.8

Ω

9.0 A

1/9

类似零件编号 - STP9NB60

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STP9NB60	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET
Inchange Semiconductor ...	STP9NB60	372Kb / 2P	isc N-Channel MOSFET Transistor
Inchange Semiconductor ...	STP9NB60FP	319Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP9NB60

制造商	部件名	数据表	功能描述
STMicroelectronics	IRFBC40	92Kb / 8P	N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET Aug-1998
	STB9NB60	93Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET Jan-2000
	STGP10NB60S	85Kb / 8P	N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP12NB60HD	409Kb / 9P	N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT Jul-2003
	STGP20NB60K	42Kb / 6P	N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT Jun-2000
	STGP3NB60H	87Kb / 8P	N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT Jun-1999
	STGP7NB60H	86Kb / 8P	N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT Jun-1999
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	STP8NC50	352Kb / 10P	N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET Dec-2000
	STP9NC60	108Kb / 9P	N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET Feb-2000