STP9NC60FP datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STP9NC60FP

功能描述	N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 9 page

STP9NC60

STP9NC60FP

N - CHANNEL 600V - 0.6

Ω - 9A TO-220/TO-220FP

PowerMESH

™ ΙΙ MOSFET

ν

TYPICAL RDS(on) = 0.6

Ω

ν

EXTREMELY HIGH dv/dt CAPABILITY

ν

100% AVALANCHE TESTED

ν

NEW HIGH VOLTAGE BENCHMARK

ν

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™ II is the evolution of the first

generation of MESH OVERLAY

™ . The layout

refinements

introduced

greatly

improve

the

Ron*area figure of merit while keeping the device

at the leading edge for what concerns switching

speed, gate charge and ruggedness.

APPLICATIONS

ν

HIGH CURRENT, HIGH SPEED SWITCHING

ν

SWITH MODE POWER SUPPLIES (SMPS)

ν

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

®

INTERNAL SCHEMATIC DIAGRAM

February 2000

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Uni t

ST P9NC60

STP9NC60F P

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

600

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC9.0

5.2

A

ID

Drain Current (continuous) at Tc = 100

oC5.7

3.3

A

IDM(

•)

Drain Current (pulsed)

36

A

Ptot

T otal Dissipation at Tc =25

oC

125

40

W

Derating Fact or

1.0

0.32

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ ns

VISO

Insulation Withst and Voltage (DC)



2000

V

Tstg

Storage Temperat ure

-65 to 150

oC

Tj

Max. O perat ing Junct ion Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

T YPE

VDSS

RDS(on)

ID

STP9NC60

STP9NC60FP

600 V

<0.75

Ω

<0.75

Ω

9.0 A

5.2 A

1/9

类似零件编号 - STP9NC60FP

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STP9NC60	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET
Inchange Semiconductor ...	STP9NC60	372Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - STP9NC60FP

制造商	部件名	数据表	功能描述
STMicroelectronics	STP2NC60	334Kb / 9P	N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh™ I MOSFET Apr-2001
	STP3NC60	108Kb / 9P	N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET May-2000
	STP4NC50	107Kb / 9P	N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET May-2000
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	STP8NC60	326Kb / 9P	N-CHANNEL 600V - 0.85ohm - 7A TO-220/TO-220FP PowerMesh™II MOSFET Jul-2001
	STP9NB60	108Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET Jan-2000
	IRF630M	343Kb / 9P	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET Oct-2001
	STP10NK50Z	505Kb / 12P	N-CHANNEL 500V - 0.55??- 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET 08-Sep-2005
	STP7NB60	271Kb / 11P	N-CHANNEL 600V - 1.0 廓 - 7.2A TO-220/TO-220FP PowerMESH??MOSFET 14-Apr-2004
	IRF630M	326Kb / 14P	N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET 28-Jun-2006