2SC3503FSTU datasheet(1/6 Pages) FAIRCHILD

部件名	2SC3503FSTU

功能描述	NPN Epitaxial Silicon Transistor

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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2SC3503/KSC3503 Rev. A1

1

March 2008

2SC3503/KSC3503

NPN Epitaxial Silicon Transistor

Applications

• Audio, Voltage Amplifier and Current Source

• CRT Display, Video Output

• General Purpose Amplifier

Features

• High Voltage : VCEO= 300V

• Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V

• Excellent Gain Linearity for low THD

• High Frequency: 150MHz

• Full thermal and electrical Spice models are available

• Complement to 2SA1381/KSA1381.

Absolute Maximum Ratings* T

a = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T

a=25°C unless otherwise noted

* Device mounted on minimum pad size

hFE Classification

Symbol

Parameter

Ratings

Units

BVCBO

Collector-Base Voltage

300

V

BVCEO

Collector-Emitter Voltage

300

V

BVEBO

Emitter-Base Voltage

5

V

IC

Collector Current(DC)

100

mA

ICP

Collector Current(Pulse)

200

mA

PC

Total Device Dissipation, TC=25°C

TC=125°C

7

1.2

W

TJ, TSTG

Junction and Storage Temperature

- 55 ~ +150

°C

Symbol

Parameter

Max.

Units

RθJC

Thermal Resistance, Junction to Case

17.8

°C/W

Classification

CD

E

F

hFE

40 ~ 80

60 ~ 120

100 ~ 200

160 ~ 320

1

TO-126

1. Emitter

2.Collector

3.Base

类似零件编号 - 2SC3503FSTU

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	2SC3503FSTU	159Kb / 6P	NPN Epitaxial Silicon Transistor

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