STPIC6A259

4/13

Note 1: All Voltage valuea are with respect to LGND and PGND

Note 2: Each power DMOS source is internally connected to GND

Note 3: Pulse duration

≤ 100ms and duty cycle ≤ 2%

Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts.

Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Voltage

50

V

Source-to-Drain Diode

Forward Voltage

0.8

1.1

V

High Level Input Current

1

µA

Low Level Input Current

-1

µA

Logic Supply Current

0.5

5

mA

Output Current at Which

Chopping Starts

(See Note 3 and Figg.

3, 4)

0.6

0.8

1.1

A

Nominal Current

(See Note 5, 6, 7)

350

mA

Off-State Drain Current

0.1

1

µA

0.2

5

µA

Termination Resistance

(See Note 5, 6 and figg. 9,

10)

1

1.5

Ω

1.7

2.5

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Propagation Dealy Time,

High to Low Level Output

from D

(See Figg. 1, 2, 11)

30

ns

Propagation Dealy Time,

Low to High Level Output

from D

125

ns

Rise Time, Drain Output

60

ns

Fall Time, Drain Output

30

ns

Reverse Recovery Current

Rise Time

di/dt = 20A/

µs

(See Note 5, 6 and Fig. 5)

100

ns

Reverse Recovery Time

300

ns