STPIC6C595

4/14

Note 1: All Voltage value are with respect to GND

Note 2: Each power DMOS source is internally connected to GND

Note 3: Pulse duration

≤ 100µs and duty cycle ≤ 2%

Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts.

Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Voltage

33

37

V

Source-to-Drain Diode

Forward Voltage

0.85

1.2

V

High Level Output Voltage

SER OUT

4.4

4.49

V

4

4.2

V

Low Level Output Voltage

SER OUT

0.005

0.1

V

0.3

0.5

V

High Level Input Current

1

µA

Low Level Input Current

-1

µA

Logic Supply Current

20

200

µA

Frequency

All outputs OFF

(See Figg. 6, 18 and 19)

0.2

2

mA

Nominal Current

(See Note 5, 6, 7)

90

mA

Off-State Drain Current

0.3

5

µA

0.6

8

µA

Static Drain Source ON

State Resistance (See Note

5, 6 and figg. 14, 16)

4.5

6

Ω

6.5

9

Ω

4.5

6

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Propagation Dealy Time,

High to Low Level Output

from G

(See Figg. 4, 5, 6,7, 20)

80

ns

Propagation Dealy Time,

Low to High Level Output

from G

130

ns

Rise Time, Drain Output

60

ns

Fall Time, Drain Output

50

ns

propagation Delay Time

20

ns

Reverse Recovery Current

Rise Time

di/dt = 10A/

µs

(See Note 5, 6 and Fig. 9 and 10)

39

ns

Reverse Recovery Time

115

ns