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STPS15L30CB 数据表(PDF) 2 Page - STMicroelectronics |
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STPS15L30CB 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() STPS15L30CB 2/5 Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C VR =VRRM 1mA Tj = 125°C 70 140 mA VF * Forward voltage drop Tj = 25 °CIF = 7.5 A 0.48 V Tj = 125°C IF = 7.5 A 0.34 0.39 Tj=25 °CIF =12 A 0.53 Tj = 125°C IF =12 A 0.40 0.47 Tj=25 °CIF =15 A 0.57 Tj = 125°C IF =15 A 0.44 0.51 Pulse test : * tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P=0.27xIF(AV) + 0.016 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode Total 4 2.4 °C/W Rth(c) Coupling 0.7 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES |
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