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STPS160 数据表(PDF) 3 Page - STMicroelectronics |
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STPS160 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() 1E-3 1E-2 1E-1 1E+0 0 1 2 3 4 5 6 7 8 t(s) IM(A) Ta=25°C Ta=50°C Ta=100°C IM t δ=0.5 Fig. 3-1: Non repetive surge peak forward current versus overload duration (maximum values) (SMB). 1E-3 1E-2 1E-1 1E+0 0 1 2 3 4 5 6 7 8 Ta=25°C Ta=50°C Ta=100°C t(s) IM(A) IM t δ=0.5 Fig. 3-2: Non repetive surge peak forward current versus overload duration (maximum values) (SMA). 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 tp(s) Zth(j-a)/Rth(j-a) δ=0.1 δ=0.2 δ=0.5 Single pulse Printed circuit board: S(Cu)=1.5cm² (e=35µm) T δ=tp/T tp Fig. 4-1: Relative variation of thermal impedance junction to ambient versus pulse duration (SMB). 1E-2 1E-1 1E+0 1E+1 1E+2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 tp(s) Zth(j-a)/Rth(j-a) δ=0.1 δ=0.2 δ=0.5 Single pulse T δ=tp/T tp Printed circuit board: S(Cu)=1.5cm² (e=35µm) Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (SMA). 0 5 10 15 20 25 30 35 40 45 50 55 60 1E-1 1E+0 1E+1 1E+2 1E+3 VR(V) IR(µA) Tj=100°C Tj=75°C Tj=25°C Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 1 2 5 10 20 50 100 10 20 50 100 200 VR(V) C(pF) F=1MHz Tj=25°C Fig. 6: Junction capacitance versus reverse volt- age applied (typical values) STPS160A/U 3/6 |
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