STPS20150CT/CG/CR/CFP

4/7

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

TO-220AB, I PAK and D PAK

22

t (s)

p

Z/R

th(j-c)

th(j-c)

T

tp

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6-1: Relative variation of thermal impedance

junction to case versus pulse duration. TO-220AB,

I²PAK and D²PAK

0

25

50

75

100

125

150

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

I (µA)

R

V (V)

R

T =175°C

j

T =150°C

j

T =125°C

j

T =100°C

j

T =25°C

j

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

1

2

5

10

20

50

100

200

10

100

1000

C(nF)

F=1MHz

T =25°C

j

V (V)

R

Fig. 8: Junction capacitance versus reverse voltage

applied (typical values, per diode).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

TO-220FPAB

t (s)

p

Z/R

th(j-c)

th(j-c)

T

tp

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6-2: Relative variation of thermal impedance

junction

to

case

versus

pulse

duration.

TO-220FPAB

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.1

1.0

10.0

100.0

I

(A)

FM

V

(V)

FM

T =125°C

(typical values)

j

T =25°C

j

T =125°C

j

Fig. 8: Forward voltage drop versus forward

current (per diode).

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

S(cm²)

R

(°C/W)

th(j-a)

Fig. 9: Thermal resistance junction to ambient versus

copper surface under tab (Epoxy printed circuit board,

Cu = 35µm) (STPS20150CG only).