STPS2045CG-TR datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

1E-3

1E-2

1E-1

1E+0

100

120

140

t(s)

IM(A)

Tc=100

°C

Tc=75

°C

Tc=125

°C

δ=0.5

Fig. 3-1: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TO-220AB and D

2PAK).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 4-1: Relative variation of thermal transient

impedance junction to case versus pulse duration

(TO-220AB and D

2PAK).

100

125

150

175

Tamb(

°C)

IF(av)(A)

Rth(j-a)=15

°C/W

Rth(j-a)=Rth(j-c)

TO-220AB

D PAK

ISOWATT220AB

δ=tp/T

Fig.

Average

current

versus

ambient

temperature (

δ=0.5, per diode).

1E-3

1E-2

1E-1

1E+0

100

Tc=100

°C

Tc=75

°C

Tc=125

°C

t(s)

IM(A)

δ=0.5

Fig. 3-2: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (ISOWATT220AB).

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 4-2: Relative variation of thermal transient

impedance junction to case versus pulse duration

(ISOWATT220AB).

0123

45678

IF(av) (A)

PF(av)(W)

δ=tp/T

δ =1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

STPS2045CT/CF/CG

3/7

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