STPS20H100CF datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

STPS20H100CT/CF/CG/CG-1

2/7

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-220AB / D

2PAK / I2PAK

Per diode

1.6

°C/W

ISOWATT220AB

Per diode

TO-220AB / D

2PAK / I2PAK

Total

0.9

ISOWATT220AB

Total

3.2

°C/W

Rth (c)

TO-220AB / D

2PAK / I2PAK

Coupling

0.15

ISOWATT220AB

Coupling

2.5

THERMAL RESISTANCES

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25

°CVR =VRRM

4.5

µA

Tj = 125

°C2

VF **

Forward voltage drop

Tj = 25

°CIF = 8 A

0.71

Tj = 25

°CIF = 10 A

0.77

Tj = 25

°CIF = 16 A

0.81

Tj = 25

°CIF = 20 A

0.88

Tj = 125

°CIF = 8 A

0.56

0.58

Tj = 125

°CIF = 10 A

0.59

0.64

Tj = 125

°CIF = 16 A

0.65

0.68

Tj = 125

°CIF = 20 A

0.67

0.73

Pulse test :

* tp = 5 ms,

δ <2%

** tp = 380

µs, δ <2%

To evaluate the maximum conduction losses use the following equation :

P = 0.55 x IF(AV) + 0.009 x IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

02468

IF(av) (A)

PF(av)(W)

δ = 0.5

δ =1

δ = 0.05

δ = 0.2

δ = 0.1

δ=tp/T

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

100

125

150

175

IF(av)(A)

Tamb(

°C)

ISOWATT220AB

TO220AB

Rth(j-a)=Rth(j-c)

Rth(j-a)=15

°C/W

Rth(j-a)=40

°C/W

Fig. 2: Average forward current versus ambient

temperature (

δ=0.5, per diode).

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

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