BU505 datasheet(3/10 Pages) STMICROELECTRONICS

部件名	BU505

功能描述	High Voltage NPN Multiepitaxial Fast-Switching Transistor

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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BU505

2 Electrical Characteristics

3/10

Electrical Characteristics

Table 3.

Electrical Characteristics (TCASE = 25°C; unless otherwise specified)

Note: 1 Pulsed duration = 300

μs, duty cycle ≤1.5%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 1500V

VCE = 1500V____TC = 125°C

0.15

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5V

VCEO(SUS)

Note: 1

Collector-Emitter

Sustaining Voltage (IB = 0)

IC = 10mA

L = 25mH

700

VCE(sat)

Note: 1

Collector-Emitter Saturation

Voltage

IC = 2A _____ IB = 0.9A

VBE(sat)

Note: 1

Base-Emitter Saturation Voltage IC = 2A _____ IB = 0.9A

1.3

Is/b

Second Breakdown Current

VCE = 120V

t = 220

μs2

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 2A ____ _ Vclamp = 250V

IB1 = 0.7A ___ Vbe(off) = -5A

Rbb = 0

L = 200

μH

350

μs

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