BU900TP datasheet(3/8 Pages) STMICROELECTRONICS

部件名	BU900TP

功能描述	NPN power TRILINTON

PDF	8 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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BU900TP

Electrical characteristics

3/8

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IEBO

Emitter cut-off current

(IC = 0)

VEB = 8 V

100

µA

ICES

Collector cut-off current

(VBE = 0)

VCE = 370 V

100

µA

V(BR)CES

Collector-emitter

breakdown voltage

(VBE = 0)

IC = 50 mA

370

660

VCE(sat)

(1)

Pulsed duration = 300 ms, duty cycle

≤1.5%

Collector-emitter

saturation voltage

IC = 2.5 A

_ IB = 1 mA

IC = 3 A

_ _

IB = 3 mA

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 3 A

IB = 3 mA

3.5

hFE

DC current gain

IC = 1 A

VCE = 5 V 7000

Diode forward voltage

IC = 5 A

Es/b

(1)

Secondary breakdown

energy

IC = 4 A

L = 10 mH

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