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2N720A 数据表(PDF) 2 Page - STMicroelectronics

部件名 2N720A
功能描述  EPITAXIAL PLANAR NPN
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2N720A 数据表(HTML) 2 Page - STMicroelectronics

  2N720A Datasheet HTML 1Page - STMicroelectronics 2N720A Datasheet HTML 2Page - STMicroelectronics 2N720A Datasheet HTML 3Page - STMicroelectronics 2N720A Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
83.3
300
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 90 V
10
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100
µA
120
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 30 mA
80
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100
µA
7V
IEBO
Emitter Cut-off
Current (IE = 0)
VEB = 5 V
10
nA
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 50 mA
IB = 5 mA
IC = 150 mA
IB = 15 mA
1.2
5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 50 mA
IB = 5 mA
IC = 150 mA
IB = 15 mA
0.9
1.3
V
V
hFE
∗
DC Current Gain
IC = 100
µA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
20
35
40
120
hfe
∗
Small Signal Current
Gain
IC = 50 mA
VCE = 10 V
f = 20 MHz
2.5
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1 MHz
15
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 1 MHz
85
pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2N720A
2/4



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