2STW1693 datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

2STW1693

Electrical characteristics

3/9

Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -100 V

-0.1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = -6 V

-0.1

µA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -1 mA

-6

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = -100 µA

-100

V(BR)CEO

Collector-emitter breakdown

voltage (IB = 0)

IC = -50 mA

-80

VCE(sat)

(1)

Pulsed duration = 300 µs, duty cycle

≤ 1.5%

Collector-emitter saturation

voltage

IC = -2 A

IB = -200 mA

IC = -6 A

IB = -600 mA

-0.6

-1.5

VBE

(1)

Base-emitter voltage

VCE = -4 V

IC = -6 A

-1.5

hFE

DC current gain

IC = -2 A

VCE = -4 V

120

Transition frequency

IC = -0.5 A

VCE = -12 V

MHz

CCBO

Collector-base capacitance

(IE = 0)

VCB = -10 V

f = 1 MHz

ton

tstg

Resistive load

Turn-on time

Storage time

Fall time

IC = -3 A

VCC = -30 V

IB1 = -IB2 = -0.3 A

0.18

0.6

0.09

2STW1693 数据表(PDF) 3 Page - STMicroelectronics

2STW1693 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载

链接网址

2STW1693 数据表(PDF) 3 Page - STMicroelectronics

2STW1693 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载