October 2008

Rev 4

1/9

9

2STW1695

High power PNP epitaxial planar bipolar transistor

Features

Applications

Description

The device is a PNP transistor manufactured

using new BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Recommended for 70 W to 100 W high fidelity

audio frequency amplifier output stage.

Figure 1.

Internal schematic diagram

Table 1.

Device summary

TO-247

1

2

3

Order code

Marking

Package

Packaging

2STW1695

2STW1695

TO-247

Tube

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