October 2008

Rev 4

1/9

9

2STW4468

High power NPN epitaxial planar bipolar transistor

Features

Applications

Description

The device is a NPN transistor manufactured

using new BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Recommended for 70 W to 100 W high fidelity

audio frequency amplifier output stage.

Table 1.

Device summary

Figure 1.

Internal schematic diagram

TO-247

1

2

3

Order code

Marking

Package

Packaging

2STW4468

2STW4468

TO-247

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