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STPS2H100A 数据表(PDF) 3 Page - STMicroelectronics |
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STPS2H100A 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() 1E-3 1E-2 1E-1 1E+0 0 1 2 3 4 5 6 7 8 9 10 t(s) IM(A) Ta=50°C Ta=100°C Ta=150°C IM t δ=0.5 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB). 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 tp(s) Zth(j-a)/Rth(j-a) Printed circuit board: S(Cu)=1.5cm² (e=35µm) T δ=tp/T tp Single pulse δ = 0.5 δ = 0.2 δ = 0.1 Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (SMB). 0 102030405060708090 100 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 VR(V) IR(µA) Tj=125°C Tj=75°C Tj=25°C Tj=100°C Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 1 2 5 10 20 50 100 10 20 50 100 200 VR(V) C(pF) F=1MHz Tj=25°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). 1E-3 1E-2 1E-1 1E+0 0 1 2 3 4 5 6 7 8 t(s) IM(A) Ta=50°C Ta=100°C Ta=150°C IM t δ=0.5 Fig. 4: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA). 1E-2 1E-1 1E+0 1E+1 1E+2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 tp(s) Zth(j-a)/Rth(j-a) Printed circuit board: S(Cu)=1.5cm² (e=35µm) T δ=tp/T tp Single pulse δ = 0.5 δ = 0.2 δ = 0.1 Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration (SMA). STPS2H100A/U 3/6 |
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