STPS3030CT datasheet(3/6 Pages) STMICROELECTRONICS

3 / 6 page

STPS3030CT/CG/CR

3/6

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

VR(V)

j=150°C

j=125°C

j=25°C

j=100°C

j=75°C

j=50°C

IR(mA)

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

0.1

1.0

10.0

100

VR(V)

F=1MHz

osc=30mV

j=25°C

C(nF)

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

100

125

150

175

200

225

250

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

C=25°C

C=75°C

C=125°C

IM(A)

Fig. 5: Non repetitive surge peak forward

current versus overload duration (maximum

values).

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

(V)

j=25°C

(Maximum values)

j=125°C

(Maximum values)

j=125°C

(Maximum values)

j=125°C

(Typical values)

j=125°C

(Typical values)

IFM(A)

Fig. 9: Forward voltage drop versus forward

current.

S(cm²)

D²PAK

Rth(j-a)(°C/W)

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (epoxy printed

board FR4, Cu = 35µm).

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