2

RF Device Data

Freescale Semiconductor

MRF19085LR3 MRF19085LSR3

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

65

—

—

Vdc

Zero Gate Voltage Drain Current

—

—

10

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics (DC)

Gate Threshold Voltage

2

—

4

Vdc

Gate Quiescent Voltage

2.5

3.5

4.5

Vdc

Drain-Source On-Voltage

—

0.18

0.210

Vdc

Forward Transconductance

—

6

—

S

Dynamic Characteristics

—

3.6

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers.

Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Common-Source Amplifier Power Gain

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)

12

13

—

dB

Drain Efficiency

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)

η

21

23

—

%

3rd Order Intermodulation Distortion

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured

over 1.2288 MHz bandwidth @ f1 -2.5 MHz and f2 = +2.5 MHz)

IMD

—

-36.5

-35

dBc

Adjacent Channel Power Ratio

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR

measured over 30 kHz bandwidth @ f1 -885 MHz and f2 =+885 MHz)

ACPR

—

-51

-48

dBc

Input Return Loss

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)

IRL

—

-12

-9

dB

1. Part is internally matched both on input and output.

(continued)