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BUX98 数据表(PDF) 2 Page - STMicroelectronics

部件名 BUX98
功能描述  HIGH POWER NPN SILICON TRANSISTORS, imag
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUX98 数据表(HTML) 2 Page - STMicroelectronics

  BUX98 Datasheet HTML 1Page - STMicroelectronics BUX98 Datasheet HTML 2Page - STMicroelectronics BUX98 Datasheet HTML 3Page - STMicroelectronics BUX98 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 10
Ω)
VCE = VCES
VCE = VCES
Tcase = 125
oC
1
8
µA
µA
ICES
Collector Cut-off
Current (VBE = 0 )
VCE = VCES
VCE = VCES
Tcase = 125
oC
400
4
µA
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = VCEO
2mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
2
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA
for BUX98
for BUX98A
400
450
V
V
VCER(sus)
∗ Collector-Emitter
Sustaining Voltage
L = 2mH
IC = 1 A
for BUX98
for BUX98A
850
1000
V
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
for BUX98
IC = 20 A
IB = 4 A
for BUX98A
IC = 16 A
IB = 3.2 A
IC = 24 A
IB = 5 A
1.5
1.5
5
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
for BUX98
IC = 20 A
IB = 4 A
for BUX98A
IC = 16 A
IB = 3.2 A
1.6
1.6
V
V
ton
Turn-on Time
for BUX98
1
µs
ts
Storage Time
VCC = 150 V
IC = 20 A
3
µs
tf
Fall Time
IB1 = - IB2 = 4 A
0.8
µs
ton
Turn-on Time
for BUX98A
1
µs
ts
Storage Time
VCC = 150 V
IC = 16 A
3
µs
tf
Fall Time
IB1 = - IB2 = 3.2 A
0.8
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
BUX98 / BUX98A
2/4



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