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MRF372R3 数据表(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF372R3 数据表(HTML) 2 Page - Freescale Semiconductor, Inc |
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2 / 16 page ![]() 2 RF Device Data Freescale Semiconductor MRF372R3 MRF372R5 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =10 μA) V(BR)DSS 68 — — Vdc Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (1) (VDS = 10 V, ID = 200 μA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (2) (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.5 4.5 Vdc Drain-Source On-Voltage (1) (VGS = 10 V, ID = 3 A) VDS(on) — 0.28 0.45 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs — 2.6 — S Dynamic Characteristics (1) Input Capacitance (Includes Input Matching Capacitance) (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss — 260 — pF Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Coss — 69 — pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Crss — 2.5 — pF Functional Characteristics, Narrowband Operation (2) (In Freescale MRF372 Narrowband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) Gps 16 17 — dB Drain Efficiency (VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) η 33 36 — % Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 800 mA, f1 = 857 MHz, f2 = 863 MHz) IMD — -35 -31 dBc Typical Characteristics, Broadband Operation (2) (In Freescale MRF372 Broadband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) Gps — 14.5 — dB Drain Efficiency (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) η — 37 — % Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA, f1 = 857 MHz, f2 = 863 MHz) IMD — -31 — dBc 1. Each side of device measured separately. 2. Measurement made with device in push-pull configuration. |
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