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MRF372 数据表(PDF) 2 Page - Freescale Semiconductor, Inc

部件名 MRF372
功能描述  RF Power Field-Effect Transistor
PDF  16 Pages
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制造商  FREESCALE [Freescale Semiconductor, Inc]
网页  http://www.freescale.com
标志 FREESCALE - Freescale Semiconductor, Inc

MRF372 数据表(HTML) 2 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF372R3 MRF372R5
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 μA)
V(BR)DSS
68
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
10
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 V, ID = 200 μA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage (2)
(VDS = 32 V, ID = 100 mA)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 V, ID = 3 A)
VDS(on)
0.28
0.45
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.6
S
Dynamic Characteristics (1)
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Ciss
260
pF
Output Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Coss
69
pF
Reverse Transfer Capacitance
(VDS = 32 V, VGS = 0 V, f = 1 MHz)
Crss
2.5
pF
Functional Characteristics, Narrowband Operation (2) (In Freescale MRF372 Narrowband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
16
17
dB
Drain Efficiency
(VDD = 32 V, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
33
36
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 800 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
-35
-31
dBc
Typical Characteristics, Broadband Operation (2) (In Freescale MRF372 Broadband Circuit, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
Gps
14.5
dB
Drain Efficiency
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
η
37
%
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 1000 mA,
f1 = 857 MHz, f2 = 863 MHz)
IMD
-31
dBc
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.



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