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STPS30L60CW 数据表(PDF) 2 Page - STMicroelectronics |
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STPS30L60CW 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() STPS30L60CW/CT/CG/CR 2/6 Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage cur- rent Tj = 25°C VR =VRRM 480 µA Tj = 125°C 77 130 mA VF * Forward voltage drop Tj = 25 °CIF =15 A 0.6 V Tj = 125°C IF =15 A 0.5 0.56 Tj=25 °CIF =30 A 0.75 Tj = 125°C IF =30 A 0.65 0.7 Pulse test : * tp = 380 µs, δ <2% To evaluate the maximum conduction losses use the following equation : P=0.42xIF(AV) + 0.009 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode Total 1.5 0.8 °C/W Rth(c) Coupling 0.1 °C/W THERMAL RESISTANCES 0 2 4 6 8 101214 161820 0 2 4 6 8 10 12 PF(av)(W) T δ=tp/T tp IF(av) (A) δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 Fig. 1: Average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 IF(av)(A) Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) Tamb(°C) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature( δ = 0.5, per diode). When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) |
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