BU508AW datasheet(4/11 Pages) STMICROELECTRONICS

部件名	BU508AW

功能描述	High voltage NPN power transistor for standard definition CRT display

PDF	11 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

BU508AW

4/11

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE =0)

VCE = 1500V

VCE = 1500V;

TC= 125°C

0.2

IEBO

Emitter cut-off current

(IC =0)

VEB = 9V

1mA

VCEO(sus)

(1)

Collector-emitter

sustaining voltage

(IC =0)

IC = 100mA

700

VCE(sat)

(1)

Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %

Collector-emitter

saturation voltage

IC = 4.5A

IB = 1.6A

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 4.5A

IB = 2A

1.1

hFE

(1)

DC current gain

IC = 0.1A

VCE = 5V

IC = 4.5A

VCE = 5V

Inductive load

Storage time

Fall time

IC = 4.5A

IB(on) = 0.5A

VBE(off) = -2.7V fh = 16KHz

LBB(off) = 4.5µH

2.5

0.2

µs

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