STP11NK40Z datasheet(3/16 Pages) STMICROELECTRONICS

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STB11NK40Z - STP11NK40ZFP - STP11NK40Z

Electrical ratings

3/16

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/D²PAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

400

VDGR

Drain-gate voltage (RGS = 20KΩ)

400

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

9(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100°C

5.67

5.67(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

36(1)

PTOT

Total dissipation at TC = 25°C

110

Derating Factor

0.88

0.24

W/°C

VESD(G-S)

Gate source ESD (HBM-C= 100pF,

R= 1.5k

Ω)

3500

dv/dt(3)

ISD ≤9A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/D²PAK

TO-220FP

Rthj-case

Thermal resistance junction-case max

1.14

4.2

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

190

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