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2SC1472K 数据表(PDF) 2 Page - Renesas Technology Corp |
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2SC1472K 数据表(HTML) 2 Page - Renesas Technology Corp |
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2 / 6 page ![]() 2SC1472(K) Rev.2.00 Aug 10, 2005 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO 30 — — V IC = 1 mA, RBE = ∞ Collector cutoff current ICBO — — 100 nA VCB = 30 V, IE = 0 Emitter cutoff current IEBO — — 100 nA VEB = 10 V, IC = 0 DC current transfer ratio hFE1* 1 2000 — 100000 IC = 10 mA, VCE = 5 V hFE2* 1 3000 — — IC = 100 mA, VCE = 5 V (Pulse Test) hFE3* 1 3000 — — IC = 400 mA, VCE = 5 V (Pulse Test) Collector to emitter saturation voltage VCE(sat) — — 1.5 V IC = 100 mA, IB = 0.1 mA Base to emitter voltage VBE(sat) — — 2.0 V IC = 100 mA, IB = 0.1 mA Gain bandwidth product fT 50 — — MHz VCE = 5 V, IC = 10 mA Collector output capacitance Cob — — 10 pF VCB = 10 V, IE = 0, f = 1 MHz Turn on time ton — 60 — ns VCC = 11 V IC = 100 IB1 = 100 mA IB2 = –IB1 Turn off time toff — 800 — ns Storage time tstg — 350 — ns Note: 1. The 2SC1472(K) is grouped by hFE as follows. A B hFE1 2000 to 100000 5000 to 100000 hFE2 3000 min 10000 min hFE3 3000 min 10000 min Switching Time Test Circuit 50 50 0.002 –6 V 6 k 100 11 V 6 k D.U.T. CRT P.G. tr, tf ≤ 15 ns PW 10 µs duty ratio ≤ 10% + – 50 0.002 + – Unit R : Ω C : µF 13 V 0 0 10% Response Waveform 90% ton toff td tstg Input Output 90% 10% 10% 90% |
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