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2SC1472K 数据表(PDF) 2 Page - Renesas Technology Corp

部件名 2SC1472K
功能描述  Silicon NPN Epitaxial, Darlington
PDF  6 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

2SC1472K 数据表(HTML) 2 Page - Renesas Technology Corp

  2SC1472K Datasheet HTML 1Page - Renesas Technology Corp 2SC1472K Datasheet HTML 2Page - Renesas Technology Corp 2SC1472K Datasheet HTML 3Page - Renesas Technology Corp 2SC1472K Datasheet HTML 4Page - Renesas Technology Corp 2SC1472K Datasheet HTML 5Page - Renesas Technology Corp 2SC1472K Datasheet HTML 6Page - Renesas Technology Corp  
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2SC1472(K)
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown voltage
V(BR)CEO
30
V
IC = 1 mA, RBE =
Collector cutoff current
ICBO
100
nA
VCB = 30 V, IE = 0
Emitter cutoff current
IEBO
100
nA
VEB = 10 V, IC = 0
DC current transfer ratio
hFE1*
1
2000
100000
IC = 10 mA, VCE = 5 V
hFE2*
1
3000
IC = 100 mA, VCE = 5 V
(Pulse Test)
hFE3*
1
3000
IC = 400 mA, VCE = 5 V
(Pulse Test)
Collector to emitter saturation voltage
VCE(sat)
1.5
V
IC = 100 mA, IB = 0.1 mA
Base to emitter voltage
VBE(sat)
2.0
V
IC = 100 mA, IB = 0.1 mA
Gain bandwidth product
fT
50
MHz
VCE = 5 V, IC = 10 mA
Collector output capacitance
Cob
10
pF
VCB = 10 V, IE = 0, f = 1 MHz
Turn on time
ton
60
ns
VCC = 11 V
IC = 100 IB1 = 100 mA
IB2 = –IB1
Turn off time
toff
800
ns
Storage time
tstg
350
ns
Note:
1. The 2SC1472(K) is grouped by hFE as follows.
A
B
hFE1
2000 to 100000 5000 to 100000
hFE2
3000 min
10000 min
hFE3
3000 min
10000 min
Switching Time Test Circuit
50
50
0.002
–6 V
6 k
100
11 V
6 k
D.U.T.
CRT
P.G.
tr, tf
≤ 15 ns
PW 10
µs
duty ratio
≤ 10%
+
50
0.002
+
Unit R :
C :
µF
13 V
0
0
10%
Response Waveform
90%
ton
toff
td
tstg
Input
Output
90%
10%
10%
90%



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