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STP24NM65N 数据表(PDF) 1 Page - STMicroelectronics |
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STP24NM65N 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 19 page ![]() February 2008 Rev 1 1/19 19 STW24NM65N-STI24NM65N-STF24NM65N STB24NM65N - STP24NM65N N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type VDSS (@TJmax) RDS(on) max ID STB24NM65N 710 V < 0.19 Ω 19 A STI24NM65N 710 V < 0.19 Ω 19 A STF24NM65N 710 V < 0.19 Ω 19 A(1) 1. Limited only by maximum temperature allowed STP24NM65N 710 V < 0.19 Ω 19 A STW24NM65N 710 V < 0.19 Ω 19 A TO-220 TO-220FP I²PAK 1 2 3 1 2 3 1 2 3 1 2 3 TO-247 1 3 D²PAK Table 1. Device summary Order codes Marking Package Packaging STB24NM65N 24NM65N D²PAK Tape and reel STI24NM65N 24NM65N I²PAK Tube STF24NM65N 24NM65N TO-220FP Tube STP24NM65N 24NM65N TO-220 Tube STW24NM65N 24NM65N TO-247 Tube www.st.com |
类似零件编号 - STP24NM65N |
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类似说明 - STP24NM65N |
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