1E-3

1E-2

1E-1

1E+0

0

50

100

150

200

250

300

350

t(s)

IM(A)

Tc=75

°C

Tc=100

°C

Tc=125

°C

t

δ=0.5

Fig. 3-1: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (SOT-93 and TO-247).

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

T

tp

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 4: Relative variation of thermal transient

impedance junction to case versus pulse duration.

1E-3

1E-2

1E-1

1E+0

0

50

100

150

200

250

IM(A)

Tc=75

°C

Tc=100

°C

Tc=125

°C

t(s)

t

δ=0.5

Fig. 3-2: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TOP-3I).

0

5

10

15

20

25

30

35

40

45

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

VR(V)

IR(

µA)

Tj=150

°C

Tj=100

°C

Tj=125

°C

Tj=75

°C

Tj=50

°C

Tj=25

°C

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1

10

100

200

VFM(V)

IFM(A)

Typical values

Tj=125

°C

Tj=125

°C

Tj=25

°C

Fig. 7: Forward voltage drop versus forward

current (maximum values, per diode).

12

5

10

20

50

0.1

1.0

5.0

VR(V)

C(nF)

F=1MHz

Tj=25

°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values, per diode).

STPS6045CP/CPI/CW

3/5