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STPS640CB 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS640CB
功能描述  POWER SCHOTTKY RECTIFIER
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS640CB 数据表(HTML) 2 Page - STMicroelectronics

  STPS640CB Datasheet HTML 1Page - STMicroelectronics STPS640CB Datasheet HTML 2Page - STMicroelectronics STPS640CB Datasheet HTML 3Page - STMicroelectronics STPS640CB Datasheet HTML 4Page - STMicroelectronics STPS640CB Datasheet HTML 5Page - STMicroelectronics STPS640CB Datasheet HTML 6Page - STMicroelectronics  
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Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
TO-220AB/ DPAK
Per diode
Total
5.5
3
°C/W
ISOWATT220AB
Per diode
Total
7.5
5.2
Rth(c)
Coupling
TO-220AB
0.5
°C/W
ISOWATT220AB
3
THERMAL RESISTANCES
Symbol
Tests Conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage current
Tj = 25
°CVR =VRRM
100
µA
Tj = 125
°C
2
10
mA
VF *
Forward voltage drop
Tj = 25
°CIF = 3 A
0.63
V
Tj = 25
°CIF = 6 A
0.84
Tj = 125
°CIF = 3 A
0.5
0.57
Tj = 125
°CIF = 6 A
0.67
0.72
Pulse test :
* tp = 380
µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.050 IF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Tamb(
°C)
IF(av)(A)
Rth(j-a)=15
°C/W
Rth(j-a)=Rth(j-c)
ISOWATT220AB
TO-220AB/DPAK
T
δ=tp/T
tp
Fig. 2: Average current versus ambient temperature
(
δ = 0.5, per diode).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IF(av) (A)
PF(av)(W)
T
δ=tp/T
tp
δ =1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STPS640CT/CF/CB
2/6



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