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STPS660CB 数据表(PDF) 2 Page - STMicroelectronics |
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STPS660CB 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 3 page ![]() Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 3.5 °C/W Total 2 THERMAL RESISTANCES Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25 °CVR = 60 V 30 µA Tj = 125 °C2.5 10 mA VF ** Forward voltage drop Tj = 25 °CIF = 3 A 0.65 V Tj = 125 °CIF = 3 A 0.55 0.59 STATIC ELECTRICAL CHARACTERISTICS Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.49 x IF(AV) + 0.035 IF 2 (RMS) Typical junction capacitance, VR = 0 V F = 1MHz Tj = 25°C C = 815pF STPS660CB(-TR) 2/3 |
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