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STS2DNF30L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STS2DNF30L
功能描述  Dual N-channel 30V - 0.09ohm - 3A SO-8 STripFET TM Power MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS2DNF30L 数据表(HTML) 2 Page - STMicroelectronics

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STS2DNF30L
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THERMAL DATA
(*) Mounted on FR-4 board (t
[ 10 sec.)
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (1)
DYNAMIC
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Single Operation
Dual Operating
Thermal Operating Junction-ambient
Storage Temperature
62.5
78
150
-55 to 175
°C/W
°C/W
°C
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 18V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
1
1.7
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 1 A
VGS = 5 V
ID = 1 A
0.09
0.13
0.011
0.15
Ω
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (*)
Forward Transconductance
VDS>ID(on)xRDS(on)max ID=2.5A
2.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
121
45
11
pF
pF
pF



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