STS2NF100 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STS2NF100

功能描述	N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET™ II POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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October 2002

.

STS2NF100

N-CHANNEL 100V - 0.23

Ω - 6A SO-8

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.23 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100 % AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STS2NF100

100 V

<0.26

Ω

6 A

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(

••) Pulse width limited by safe operating area.

(

•) Current limited by the package

(1) ISD ≤2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 3A, VDD = 50V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID(•)

Drain Current (continuous) at TC = 25°C

2A

ID

Drain Current (continuous) at TC = 100°C

1.3

A

IDM(••)

Drain Current (pulsed)

8

A

Ptot

Total Dissipation at TC = 25°C

2.5

W

Derating Factor

0.016

W/°C

dV/dt (1)

Peak Diode Recovery voltage slope

40

V/ns

EAS (2)

Single Pulse Avalanche Energy

200

mJ

Tstg

Storage Temperature

-65 to 175

°C

Tj

Max. Operating Junction Temperature

类似零件编号 - STS2NF100

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STS2NF100	469Kb / 9P	N-Channel 100 V (D-S) MOSFET

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