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STS3C3F30L 数据表(PDF) 1 Page - STMicroelectronics |
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STS3C3F30L 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET™ II POWER MOSFET 1/10 February 2002 . STS3C3F30L s TYPICAL RDS(on) (N-Channel) = 50 mΩ s TYPICAL RDS(on) (P-Channel) = 140 mΩ s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s LOW THRESHOLD DRIVE DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resis- tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing re- producibility. APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES TYPE VDSS RDS(on) ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 m Ω < 165 m Ω 3.5 A 3 A SO-8 ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Symbol Parameter N-CHANNEL P-CHANNEL Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 16 V ID Drain Current (continuos) at TC = 25°C Single Operating 3.5 2.7 A ID Drain Current (continuos) at TC = 100°C Single Operating 2.2 1.7 A IDM(•) Drain Current (pulsed) 14 11 A Ptot Total Dissipation at TC = 25°C Dual Operating Total Dissipation at TC = 25°C Single Operating 1.6 2 W W Tstg Storage Temperature -60 to 150 °C Tj Max. Operating Junction Temperature 150 °C INTERNAL SCHEMATIC DIAGRAM |
类似零件编号 - STS3C3F30L |
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类似说明 - STS3C3F30L |
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