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2SC2853 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SC2853 数据表(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page ![]() 2SC2853 Rev.2.00 Aug 10, 2005 page 4 of 6 810 6 24 0 Emitter to Base Voltage VEB (V) 1,000 100 10 1.0 0.1 Emitter Cut-Off Current vs.Emitter to Base Voltage 10 100 1 k 10 k 100 k Base to Emitter Resistance RBE (Ω) 190 180 170 160 150 140 Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance Typical Value IC = 1 mA 3 10 30 100 1 Collector Current IC (mA) 1,000 300 100 30 10 DC Current Transfer Ratio vs. Collector Current 25 –25 Ta = 75 °C VCE = 12 V Pulse 30 100 310 1 Collector Current IC (mA) 1.0 0.3 0.1 0.03 0.01 Collector to Emitter Saturation Voltage vs. Collector Current Pulse IC = 10 IB Ta = 75 °C 25 –25 3 10 30 100 1 Collector Current IC (mA) 10 3 1.0 0.3 0.1 Base to Emitter Saturation Voltage vs. Collector Current Pulse IC = 10 IB Ta =–25 C 75 25 10 50 520 1.0 2 0.5 Collector Current IC (mA) 1,000 500 200 100 50 20 10 Gain Bandwidth Product vs. Collector Current VCE = 6 V |
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