2SC4261 datasheet(2/5 Pages) RENESAS

部件名	2SC4261

功能描述	Silicon NPN Epitaxial

PDF	5 Pages

Scroll/Zoom	100%

制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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2 / 5 page

2SC4261

Rev.3.00 Aug 10, 2005 page 2 of 4

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

—

IC = 10

µA, IE = 0

Collector cutoff current

ICBO

—

0.3

µA

VCB = 15 V, IE = 0

ICEO

—

µA

VCE = 15 V, RBE =

∞

Emitter cutoff current

IEBO

—

1.0

µA

VEB = 3 V, IC = 0

Collector to emitter saturation voltage

VCE(sat)

—

0.3

IC = 20 mA, IB = 4 mA

DC current transfer ratio

hFE

—

180

VCE = 5 V, IC = 5 mA

Collector output capacitance

Cob

—

0.7

1.0

VCB = 10 V, IE = 0, f = 1MHz

Gain bandwidth product

1.8

2.4

—

GHz

VCE = 5 V, IC = 20 mA

Oscillating output voltage

VOSC

—

200

—

VCC = 5 V, IC = 5 mA,

f = 930 MHz

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