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32C80 数据表(PDF) 39 Page - Renesas Technology Corp |
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32C80 数据表(HTML) 39 Page - Renesas Technology Corp |
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39 / 60 page ![]() Page 39 6 5 f o 5 0 0 2 , 1 0 . v o N 0 1 . 1 . v e R 0 1 1 0 - 8 3 0 0 B 3 0 J E R p u o r G 0 8 / C 2 3 M 5. Electrical Characteristics VCC1=VCC2=5V l o b m y Sr e t e m a r a P t n e m e r u s a e M n o i t i d n o C d r a d n a t S t i n U . n i M. x a M d t ) D A - K L C B ( e m i T y a l e D t u p t u O s s e r d d A 8 1s n h t ) D A - K L C B ( ) d r a d n a t s K L C B ( e m i T d l o H t u p t u O s s e r d d A 3 -s n h t ) D A - D R ( ) d r a d n a t s D R ( e m i T d l o H t u p t u O s s e r d d A ) 1 e t o N (s n h t ) D A - R W ( ) d r a d n a t s R W ( e m i T d l o H t u p t u O s s e r d d A ) 1 e t o N (s n d t ) S C - K L C B ( e m i T y a l e D t u p t u O l a n g i S t c e l e S - p i h C 8 1s n h t ) S C - K L C B ( ) d r a d n a t s K L C B ( e m i T d l o H t u p t u O l a n g i S t c e l e S - p i h C 3 -s n h t ) S C - D R ( ) d r a d n a t s D R ( e m i T d l o H t u p t u O l a n g i S t c e l e S - p i h C ) 1 e t o N (s n h t ) S C - R W ( ) d r a d n a t s R W ( e m i T d l o H t u p t u O l a n g i S t c e l e S - p i h C ) 1 e t o N (s n d t ) D R - K L C B ( e m i T y a l e D t u p t u O l a n g i S D R 8 1s n h t ) D R - K L C B ( e m i T d l o H t u p t u O l a n g i S D R 5 -s n d t ) R W - K L C B ( e m i T y a l e D t u p t u O l a n g i S R W 8 1s n h t ) R W - K L C B ( e m i T d l o H t u p t u O l a n g i S R W 5 -s n d t ) R W - B D ( ) d r a d n a t s R W ( e m i T y a l e D t u p t u O a t a D ) 2 e t o N (s n h t (- R W) B D ) d r a d n a t s R W ( e m i T d l o H t u p t u O a t a D ) 1 e t o N (s n d t ) E L A - K L C B ( ) d r a d n a t s K L C B ( e m i T y a l e D t u p t u O l a n g i S E L A 8 1s n h t ) E L A - K L C B ( ) d r a d n a t s K L C B ( e m i T d l o H t u p t u O l a n g i S E L A 5 -s n d t ) E L A - D A ( ) d r a d n a t s s s e r d d a ( e m i T y a l e D t u p t u O l a n g i S E L A ) 3 e t o N (s n h t ) D A - E L A ( ) d r a d n a t s s s e r d d a ( e m i T d l o H t u p t u O l a n g i S E L A ) 4 e t o N (s n z d t ) D A - D R ( e m i T t r a t S t a o l F t u p t u O s s e r d d A 8s n td(DB – WR) = 10 X m 9 – 25 [ns] (if external bus cycle is a φ + bφ, m= (bx2)-1) th(RD – AD) = f(BCLK) X 2 10 9 – 10 [ns] th(WR – AD) = f(BCLK) X 2 10 9 – 10 [ns] th(RD – CS) = f(BCLK) X 2 10 9 – 10 [ns] th(WR – CS) = f(BCLK) X 2 10 9 – 10 [ns] th(WR – DB) = f(BCLK) X 2 10 9 – 10 [ns] td(AD – ALE) = f(BCLK) X 2 9 – 20 [ns] (if external bus cycle is a φ + bφ, n= a) th(ALE – AD) = f(BCLK) X 2 9 – 10 [ns] (if external bus cycle is a φ + bφ, n= a) f(BCLK) X 2 1. Values can be obtained from the following equations, according to BCLK frequency. 2. Values can be obtained from the following equations, according to BCLK frequency and external bus cycle. 3. Values can be obtained from the following equations, according to BCLK frequency and external bus cycle. 10 X m 10 X n 4. Values can be obtained from the following equations, according to BCLK frequency and external bus cycle. 10 X n NOTES: See Figure 5.1 Switching Characteristics (VCC = 4.2 to 5.5V, VSS = 0V at Topr = –20 to 85oC unless otherwise specified) Table 5.20 Memory Expansion Mode and Microprocessor Mode (when accessing an external memory space with the multiplexed bus) |
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