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STS3DPFS30 数据表(PDF) 3 Page - STMicroelectronics |
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STS3DPFS30 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 1.5 A RG = 4.7 Ω VGS = 10 V (Resistive Load, see fig. 3) 15 29 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V ID = 3 A VGS = 10 V 23 4.2 5.8 30 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 24 V ID = 3 A RG = 4.7 Ω VGS = 10 V (Inductive Load, see fig. 5) 11 11 23 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 3 12 A A VSD ( ∗) Forward On Voltage ISD = 3 A VGS = 0 2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A di/dt = 100 A/ µs VDD = 15V Tj = 150 oC (see test circuit, figure 5) 34 45 2.6 ns nC Α ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit IR( ∗) Reversed Leakage Current TJ= 25 oC VR=30V TJ= 125 oC VR=30V 0.03 0.2 100 mA mA VF( ∗) Forward Voltage drop TJ= 25 oC IF=3A TJ= 125 oC IF=3A 0.46 0.51 0.46 V V STS3DPFS30 3/5 |
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