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STS3DPFS30L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STS3DPFS30L
功能描述  P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS3DPFS30L 数据表(HTML) 3 Page - STMicroelectronics

  STS3DPFS30L Datasheet HTML 1Page - STMicroelectronics STS3DPFS30L Datasheet HTML 2Page - STMicroelectronics STS3DPFS30L Datasheet HTML 3Page - STMicroelectronics STS3DPFS30L Datasheet HTML 4Page - STMicroelectronics STS3DPFS30L Datasheet HTML 5Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 1.5 A
RG = 4.7
Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
15
37
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 15 V
ID = 3 A
VGS = 4.5 V
5.5
1.7
1.8
7.5
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tr
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 1.5 A
RG = 4.7
Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
15
29
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(
•)
Source-drain Current
Source-drain
Current
(pulsed)
3
12
A
A
VSD (
∗)
Forward On Voltage
ISD = 3 A
VGS = 0
2
V
trr
Qrr
IRRM
Reverse
Recovery
Time
Reverse
Recovery
Charge
Reverse
Recovery
Current
ISD = 3 A
di/dt = 100 A/
µs
VDD = 15V
Tj = 150
oC
(see test circuit, figure 5)
18
12
1.33
ns
nC
Α
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR(
∗)
Reversed
Leakage
Current
TJ= 25
oC
VR=30V
TJ= 125
oC
VR=30V
0.03
0.2
100
mA
mA
VF(
∗)
Forward Voltage drop
TJ= 25
oC
IF=3A
TJ= 125
oC
IF=3A
0.38
0.51
0.46
V
V
STS3DPFS30L
3/5



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