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STS3DPFS45 数据表(PDF) 3 Page - STMicroelectronics

部件名 STS3DPFS45
功能描述  P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS3DPFS45 数据表(HTML) 3 Page - STMicroelectronics

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STS3DPFS45
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 20 V
ID = 1.5 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
20
25
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 20V ID= 3A VGS=10V
24.5
4
5.5
33
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 20 V
ID = 1.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
100
22
ns
ns
td(off)
tf
tc
Turn-off Delay Time
Fall Time
Cross-over Time
Vclamp = 32 V
ID = 3 A
RG = 4.7Ω,
VGS = 10 V
95
11
35
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
3
12
A
A
VSD (*)
Forward On Voltage
ISD = 3 A
VGS = 0
2V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A
di/dt = 100A/µs
VDD = 15 V
Tj = 150°C
(see test circuit, Figure 5)
40
85
3.8
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance



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