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PRELIMINARY DATA

August 2002

STS4DNF30L

DUAL N-CHANNEL 30V - 0.039

Ω -4A SO-8

STripFET™ POWER MOSFET

s

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique “Single Feature Size™”

strip-based process. The resulting transistor shows

extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remarkable

manufacturing reproducibility.

APPLICATIONS

s

BATTERY MANAGMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGMENT IN CELLULAR PHONES

s

DC MOTOR DRIVE

MOSFET ABSOLUTE MAXIMUM RATINGS

TYPE

STS4DNF30L

30 V

< 0.050

Ω

4A

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 16

V

4

A

2.5

A

Drain Current (pulsed)

16

A

2W

SO-8

INTERNAL SCHEMATIC DIAGRAM