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2SC5594XP-TL-E 数据表(PDF) 2 Page - Renesas Technology Corp |
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2SC5594XP-TL-E 数据表(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page ![]() 2SC5594 Rev.2.00 Aug 10, 2005 page 2 of 7 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 12 — — V IC = 10 µA , IE = 0 Collector cutoff current ICBO — — 1 µA VCB = 10 V , IE = 0 Collector cutoff current ICEO — — 1 µA VCE = 4 V , RBE = ∞ Emitter cutoff current IEBO — — 12 µA VEB = 0.8 V , IC = 0 DC current transfer ratio hFE 60 100 140 VCE = 2 V , IC = 20 mA Collector output capacitance Cob — 0.3 0.6 pF VCB = 2 V , IE = 0 f = 1 MHz Gain bandwidth product fT 21 24 — GHz VCE = 2 V , IC = 30 mA f = 2 GHz Power gain PG 14 18 — dB VCE = 2 V, IC = 30 mA f = 1.8 GHz Noise figure NF — 1.2 1.6 dB VCE = 2 V, IC = 5 mA f = 1.8 GHz |
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