2SC5702 datasheet(1/15 Pages) RENESAS

部件名	2SC5702

功能描述	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

PDF	15 Pages

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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Rev.2.00 Aug 10, 2005 page 1 of 14

2SC5702

Silicon NPN Epitaxial

High Frequency Amplifier / Oscillator

REJ03G0752-0200

(Previous ADE-208-1414)

Rev.2.00

Aug.10.2005

Features

• High gain bandwidth product

fT = 8 GHz typ.

• High power gain and low noise figure ;

PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

Outline

1. Emitter

2. Base

3. Collector

1

3

2

RENESAS Package code: PUSF0003ZA-A

(Package name: MFPAK R )

Note:

Marking is “ZS-”.

*MFPAK is a trademark of Renesas Technology Corp.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

15

V

Collector to emitter voltage

VCEO

6

V

Emitter to base voltage

VEBO

1.5

V

Collector current

IC

50

mA

Collector power dissipation

Pc

80

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

类似零件编号 - 2SC5702

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SC5702	109Kb / 16P	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

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类似说明 - 2SC5702

制造商	部件名	数据表	功能描述
NEC	2SC4178	211Kb / 4P	HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Hitachi Semiconductor	2SC5390	30Kb / 6P	Silicon NPN Epitaxial High Frequency Amplifier
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	2SC5702	109Kb / 16P	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
Renesas Technology Corp	2SC5894	129Kb / 10P	Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
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	2SC5975	238Kb / 18P	SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR
Hitachi Semiconductor	2SC5629	73Kb / 10P	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
Renesas Technology Corp	2SC5628	217Kb / 10P	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator