STS4DPF30L datasheet(1/6 Pages) STMICROELECTRONICS

部件名	STS4DPF30L

功能描述	DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET™ POWER MOSFET

PDF	6 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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PRELIMINARY DATA

April 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STS4DPF30L

DUAL P-CHANNEL 30V - 0.07

Ω - 4A SO-8

STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.07 Ω

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGEMENT IN CELLULAR

PHONES

s

DC-DC CONVERTER

TYPE

VDSS

RDS(on)

ID

STS4DPF30L

30 V

<0.08

Ω

4 A

SO-8

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 16

V

ID

Drain Current (continuous) at TC = 25°C Single Operation

Drain Current (continuous) at TC = 100°C Single Operation

4

2.5

A

IDM(•)

Drain Current (pulsed)

16

A

Ptot

Total Dissipation at TC = 25°C Dual Operation

Total Dissipation at TC = 25°C Single Operation

2.0

1.6

W

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STS4DPF30L

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STS4DPF30L	1Mb / 9P	Dual P-Channel 30-V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	STS4DPF30L	1Mb / 5P	Dual P-Channel MOSFET uses advanced trench technology

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类似说明 - STS4DPF30L

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