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STS4DPFS2LS 数据表(PDF) 3 Page - STMicroelectronics

部件名 STS4DPFS2LS
功能描述  P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS4DPFS2LS 数据表(HTML) 3 Page - STMicroelectronics

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STS4DPFS2LS
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 15V, ID = 3A RG =4.7Ω
VGS = 10V
(see test circuit, Figure 3)
25
ns
tr
Rise Time
35
ns
Qg
Total Gate Charge
VDD = 24V, ID = 6A,
VGS = 4.5 V
12.5
16
nC
Qgs
Gate-Source Charge
5
nC
Qgd
Gate-Drain Charge
3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V, ID = 2A,
RG =4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
125
30
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 24 V, ID = 6 A,
RG =4.7Ω, VGS = 4.5 V
(see test circuit, Figure 5)
83
40
75
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
4
A
ISDM (2)
Source-drain Current (pulsed)
16
A
VSD (1)
Forward On Voltage
ISD = 4 A, VGS = 0
1.2
V
trr
Reverse Recovery Time
ISD = 4 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
45
ns
Qrr
Reverse Recovery Charge
36
nC
IRRM
Reverse Recovery Current
1.6
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR(*)
Reversed Leakage Current
TJ = 25 °C , VR = 30 V
TJ = 125 °C , VR = 30 V
14
8
50
18
µA
mA
VF(*)
Forward Voltage Drop
TJ = 25 °C , IF = 1 A
TJ = 125 °C , IF = 1 A
TJ = 25 °C , IF = 2 A
TJ = 125 °C , IF = 2 A
TJ = 25 °C , IF = 3 A
TJ = 125 °C , IF = 3 A
0.37
0.28
0.41
0.34
0.4
0.42
0.32
0.46
0.39
0.5
0.44
V
V
V
V
V
V



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