STB141NF55 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STB141NF55

功能描述	N-channel 55V - 0.0065廓 - 80A - D2PAK - I2PAK - TO-220 STripFET??II Power MOSFET

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 15 page

STB141NF55 - STB141NF55-1 - STP141NF55

Electrical ratings

3/15

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate- source voltage

±20

(1)

Current limited by package

Drain current (continuous) at TC = 25°C

(1)

Drain current (continuous) at TC = 100°C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25°C

300

Derating factor

W/°C

dv/dt (3)

ISD < 80A, di/dt < 300A/µs, VDD=80%V(BR)DSS

Peak diode recovery voltage slope

V/ns

EAS

(4)

Starting Tj = 25°C, ID = 40A, VDD = 30V

Single pulse avalance energy

1.3

Tstg

Storage temperature

–55 to 175

°C

Operating junction temperature

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 - I²PAK

D²PAK

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb (1)

When mounted on 1 inch², FR4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C/W

Maximum lead temperature for soldering

purpose (for 10 sec, 1.6mm from case)

300

°C

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